论文标题
铁磁范德华异质结构中的可调量子异常霍尔效应
Tunable Quantum Anomalous Hall Effects in Ferromagnetic van der Waals Heterostructures
论文作者
论文摘要
量子异常霍尔效应（QAHE）在拓扑应用中具有独特的优势，但是实现具有可调的磁性和拓扑特性的QAHE仍然具有挑战性。 Through systematic first-principles calculations, we predict that the in-plane magnetization induced QAHE with Chern numbers C = $\pm$1 and the out-of-plane magnetization induced QAHE with high Chern numbers C = $\pm$3 can be realized in a single material candidate, which is composed of van der Waals (vdW) coupled Bi and MnBi$_2$Te$_4$ monolayers. Qahe不同阶段之间的切换可以通过多种方式来控制，例如应用应变或（弱）磁场或扭曲VDW材料。实验可用的材料系统托管强大的QAHE的预测将激发该领域的极大研究兴趣。我们的工作为实现可调的Qahe开辟了新的途径，并为开发拓扑电子设备提供了实用的材料平台。
The quantum anomalous Hall effect (QAHE) has unique advantages in topotronic applications, but it is still challenging to realize the QAHE with tunable magnetic and topological properties for building functional devices. Through systematic first-principles calculations, we predict that the in-plane magnetization induced QAHE with Chern numbers C = $\pm$1 and the out-of-plane magnetization induced QAHE with high Chern numbers C = $\pm$3 can be realized in a single material candidate, which is composed of van der Waals (vdW) coupled Bi and MnBi$_2$Te$_4$ monolayers. The switching between different phases of QAHE can be controllable by multiple ways, such as applying strain or (weak) magnetic field or twisting the vdW materials. The prediction of an experimentally available material system hosting robust, highly tunable QAHE will stimulate great research interest in the field. Our work opens a new avenue for the realization of tunable QAHE and provides a practical material platform for the development of topological electronics.
