论文标题
单层MOS2中有效的多个激子产生
Efficient Multiple Exciton Generation in Monolayer MoS2
论文作者
论文摘要
利用否则会丢失的光激发能量，因为热效应可以提高下一代轻度收获设备的效率。半导体材料中的多个激子产生（MEG）通过吸收单个高能量光子，从而产生两个或多个激子，这可能会破坏冲击式的Queisser限制光伏设备的转换效率。最近，由于其高吸收系数，单层过渡金属二核苷（TMD）已成为有前途的轻度收获材料。在这里，我们报告了阈值较低的有效MEG，范德华（VDW）分层材料MOS2的阈值和高效率（86％）。通过不同的实验方法，我们证明了激子乘法的特征，并讨论了单层MOS2中决定性MEG的可能起源。我们的结果表明，VDW层面的材料可能是开发机械柔性且高效的下一代太阳能电池和光电探测器的潜在候选者。
Utilizing the excess energy of photoexcitation that is otherwise lost as thermal effects can improve the efficiency of next-generation light-harvesting devices. Multiple exciton generation (MEG) in semiconducting materials yields two or more excitons by absorbing a single high-energy photon, which can break the Shockley-Queisser limit for the conversion efficiency of photovoltaic devices. Recently, monolayer transition metal dichalcogenides (TMDs) have emerged as promising light-harvesting materials because of their high absorption coefficient. Here, we report efficient MEG with low threshold energy and high (86%) efficiency in a van der Waals (vdW) layered material, MoS2. Through different experimental approaches, we demonstrate the signature of exciton multiplication and discuss the possible origin of decisive MEG in monolayer MoS2. Our results reveal that vdW-layered materials could be a potential candidate for developing mechanically flexible and highly efficient next generation solar cells and photodetectors.
