论文标题
抗铁磁铁中的Chern-uslator阶段
Chern-insulator phase in antiferromagnets
论文作者
论文摘要
通常认为表现出量子异常效应的长期表现的Chern绝缘子仅被认为仅发生在铁磁体中。在这里，我们从理论上预测了抗铁磁体中Chern绝缘子的可实现性，其中磁性转子由对称操作员连接，从而实施零净力矩。我们的对称分析提供了允许抗铁磁（AFM）Chern绝缘子的综合磁性层组组，并揭示了需要内部磁性构型。其次是第一原理计算，此类设计原理自然会导致两类材料候选物，分别用沿着沿着界线和非固定AFM订单的单层RBCR4S8和BiLayer MN3SN进行了例证。我们进一步表明，Chern的数量可以通过轻微的铁磁倾斜来调节。我们的工作阐明了AFM系统中Chern-underator阶段的性质，铺平了新的途径，以搜索和设计量子异常的霍尔绝缘子，并集成了非遗传性运输以及AFM订单的有希望的优势。
The long-sought Chern insulators that manifest quantum anomalous Hall effect are typically considered to occur solely in ferromagnets. Here, we theoretically predict the realizability of Chern insulators in antiferromagnets, of which the magnetic sublattices are connected by symmetry operators enforcing zero net moment. Our symmetry analysis provides comprehensive magnetic layer point groups that allow antiferromagnetic (AFM) Chern insulators, and reveals that in-plane magnetic configuration is required. Followed by first-principles calculations, such design principles naturally lead to two categories of material candidates, exemplified by monolayer RbCr4S8 and bilayer Mn3Sn with collinear and noncollinear AFM orders, respectively. We further show that the Chern number could be tuned by slight ferromagnetic canting as an effective pivot. Our work elucidates the nature of Chern-insulator phase in AFM systems, paving a new avenue for the search and design of quantum anomalous Hall insulators with the integration of non-dissipative transport and the promising advantages of the AFM order.
