论文标题
exfoliated Zrse $ _3 $的激子的强烈各向异性应变性可接触性
Strongly anisotropic strain-tunability of excitons in exfoliated ZrSe$_3$
论文作者
论文摘要
我们研究了单轴应变对Zrse $ _3 $的带结构的影响，Zrse $ _3 $是一种具有标记的平面内结构各向异性的半导体材料。通过使用改良的三分弯曲测试设备，沿不同晶体方向沿不同的晶体应变薄薄的Zrse $ _3 $薄片，通过微反射光谱监测菌株对其光学性质的影响。所获得的光谱显示出激发单轴张力上蓝光的激子特征。这种转移很大程度上取决于施加应变的方向。当薄片沿B轴紧张时，激子峰在〜60-95 meV/％时移动，而沿A轴移动，偏移仅达到〜0-15 meV/％。进行了从头算计算，以研究沿不同晶体方向应用的单轴菌株对ZRSE $ _3 $的带结构和反射光谱的影响，与实验结果表现出了显着的一致性。
We study the effect of uniaxial strain on the band structure of ZrSe$_3$, a semiconducting material with a marked in-plane structural anisotropy. By using a modified 3-point bending test apparatus, thin ZrSe$_3$ flakes were subjected to uniaxial strain along different crystalline orientations monitoring the effect of strain on their optical properties through micro-reflectance spectroscopy. The obtained spectra showed excitonic features that blueshift upon uniaxial tension. This shift is strongly dependent on the direction along which the strain is being applied. When the flakes are strained along the b-axis, the exciton peak shifts at ~ 60-95 meV/%, while along the a-axis, the shift only reaches ~ 0-15 meV/%. Ab initio calculations were conducted to study the influence of uniaxial strain, applied along different crystal directions, on the band structure and reflectance spectra of ZrSe$_3$, exhibiting a remarkable agreement with the experimental results.
