论文标题
由LATIO3薄膜中的磁纹理驱动的线性巨磁磁性
Linear colossal magnetoresistance driven by magnetic textures in LaTiO3 thin films on SrTiO3
论文作者
论文摘要
线性磁阻（LMR）对于记忆，电子和传感应用特别感兴趣，尤其是当它在广泛的磁场上不饱和时。它的主要起源之一是局部移动性或密度不均匀性，通常是结构性的，在教区 - 小木材理论中，这导致与移动性成正比的不饱和LMR。然而，结构性障碍也倾向于限制迁移率，因此总体LMR振幅。实现大LMR的替代途径是通过非结构性不均匀性，不会影响零场迁移率（如磁域）。在这里，在\ ch {latio3}/\ ch {srtio3}异质结构中报道了由磁纹理引起的线性阳性磁化。 LMR振幅在9T时达到6500 \％。通过非常高的薄膜机动性的异常组合，高达40 000 cm $^2 $/v.s以及低搬进性区域的覆盖范围很大，可以理解这种巨大的价值。这些区域与条纹磁性结构相关，与\ ch {latio3}膜中的螺旋磁纹理兼容，该胶片由低温Lorentz透射电子显微镜揭示。这些结果为大型LMR设备的工程提供了新的途径。
Linear magnetoresistance (LMR) is of particular interest for memory, electronics, and sensing applications, especially when it does not saturate over a wide range of magnetic fields. One of its principal origins is local mobility or density inhomogeneities, often structural, which in the Parish-Littlewood theory leads to an unsaturating LMR proportional to mobility. Structural disorder, however, also tends to limit the mobility and hence the overall LMR amplitude. An alternative route to achieve large LMR is via non-structural inhomogeneities which do not affect the zero field mobility, like magnetic domains. Here, linear positive magnetoresistance caused by magnetic texture is reported in \ch{LaTiO3}/\ch{SrTiO3} heterostructures. The LMR amplitude reaches up to 6500\% at 9T. This colossal value is understood by the unusual combination of a very high thin film mobility, up to 40 000 cm$^2$/V.s, and a very large coverage of low-mobility regions. These regions correlate with a striped magnetic structure, compatible with a spiral magnetic texture in the \ch{LaTiO3} film, revealed by low temperature Lorentz transmission electron microscopy. These results provide a novel route for the engineering of large-LMR devices.
