论文标题
Sio2矩阵中各个CDSE纳米晶量点的位点选择性离子束合成和光学特性
Site-selective ion beam synthesis and optical properties of individual CdSe nanocrystal quantum dots in a SiO2 matrix
论文作者
论文摘要
硒化核纳米晶量量点（NC-QD）是通过sio2基质中的硒和镉离子的顺序离子束植入通过亚米克隆孔径在SIO2基质中通过sio2矩阵中植入的位点选择性合成的，然后是快速的热退火步骤。 NC-QD的大小，面积密度和光学发射能由植入过程中的离子和植入孔径的直径控制。对于低流量和小孔径，与散装材料的发射发射器相比，由于量子限制，与散装材料的发射相比均为$> 100 \，{\ rm mev} $。对于溶液合成的NC-QD，该发射表现出光谱扩散和闪烁的第二时间尺度。
Cadmium selenide nanocrystal quantum dots (NC-QDs) are site-selectively synthesized by sequential ion beam implantation of selenium and cadmium ions in a SiO2 matrix through sub-micron apertures followed by a rapid thermal annealing step. The size, areal density and optical emission energy of the NC-QDs are controlled by the ion fluence during implantation and the diameter of implantation aperture. For low fluences and small apertures the emission of these optically active emitters is blue-shifted compared to that of the bulk material by $>100\,{\rm meV}$ due to quantum confinement. The emission exhibits spectral diffusion and blinking on a second timescales as established also for solution synthesized NC-QDs.
