论文标题
X射线SOI像素传感器的单个事件公差
Single Event Tolerance of X-ray SOI Pixel Sensors
论文作者
论文摘要
我们评估了名为XRPIX的X射线硅在绝缘子（SOI）的单个硅的单个事件耐受性，该传感器是为未来的X射线天文卫星力开发的。在这项工作中，我们通过用线性能量传递（LET）辐射XRPIX上移位寄存器的单个事件撞击（SEU）的横截面（SEU），范围为0.022 MeV/（mg/cm2）至68 MeV/（mg/cm2）。从SEU横截面曲线中，饱和横截面和阈值成功获得为$ 3.4^{+2.9} _ { - 0.9} \ times 10^{ - 10}〜{ - 10}〜{\ rm cm^2/bit} $ and $ 7.3^^{+1.9^{+1.9}} Mev/（mg/cm^2）} $。使用这些值，轨道中的SEU速率估计为$ \ Lessim $ 0.1事件/年，主要是由于宇宙射线质子引起的次级粒子。 XRPIX上移位寄存器的SEU速率在力轨道中可以忽略不计。
We evaluate the single event tolerance of the X-ray silicon-on-insulator (SOI) pixel sensor named XRPIX, developed for the future X-ray astronomical satellite FORCE. In this work, we measure the cross-section of single event upset (SEU) of the shift register on XRPIX by irradiating heavy ion beams with linear energy transfer (LET) ranging from 0.022 MeV/(mg/cm2) to 68 MeV/(mg/cm2). From the SEU cross-section curve, the saturation cross-section and threshold LET are successfully obtained to be $3.4^{+2.9}_{-0.9}\times 10^{-10}~{\rm cm^2/bit}$ and $7.3^{+1.9}_{-3.5}~{\rm MeV/(mg/cm^2)}$, respectively. Using these values, the SEU rate in orbit is estimated to be $\lesssim$ 0.1 event/year primarily due to the secondary particles induced by cosmic-ray protons. This SEU rate of the shift register on XRPIX is negligible in the FORCE orbit.
