论文标题
微型硅原子蒸气细胞
Micro-machined deep silicon atomic vapor cells
论文作者
论文摘要
使用简单且具有成本效益的水喷射过程，克服了硅蚀刻深度限制，以实现$ 6 \ $毫米深的原子蒸气电池。虽然最小硅特征尺寸仅限于$ 1.5 \，在这些第一代蒸气中的宽度为$ mm，但我们通过在碱性药丸室和主询问室之间的蜿蜒曲折的通道中包括了$ \ sim $ 25〜mm蜿蜒的通道，从而成功地展示了两腔的几何形状。我们评估了通道电导对药丸激活过程中碱蒸气密度引入的影响，并减轻主腔室附近的玻璃损伤和药丸污染。最后，我们强调了在$ 6 \ $ mm硅电池中可实现的改进信号，而标准$ 2 \，$ mm路径长度硅蒸气电池。
Using a simple and cost-effective water jet process, silicon etch depth limitations are overcome to realize a $6\,$mm deep atomic vapor cell. While the minimum silicon feature size was limited to a $1.5\,$mm width in these first generation vapor cells, we successfully demonstrate a two-chamber geometry by including a $\sim$25~mm meandering channel between the alkali pill chamber and main interrogation chamber. We evaluate the impact of the channel conductance on the introduction of alkali vapor density during the pill activation process, and mitigate glass damage and pill contamination near the main chamber. Finally, we highlight the improved signal achievable in the $6\,$mm silicon cell compared to standard $2\,$mm path length silicon vapor cells.
