论文标题

电子对由2D门式Rashba材料中的自旋轨道相互作用结合,并带有两种频谱

Electron pairs bound by the spin-orbit interaction in 2D gated Rashba materials with two-band spectrum

论文作者

Gindikin, Yasha, Rozhansky, Igor, Sablikov, Vladimir A.

论文摘要

我们表明,由于对相互作用的电子的库仑场产生的两对旋转轨道相互作用的相互作用,绑定的电子对(BEP)在二维门控的Rashba材料中出现,并且带结构的特殊性产生,从而导致相互作用电子的负质量减少了相互作用的质量。我们的考虑是基于四波段的Bernevig-hughes-Zhang模型,其带有电荷在门上产生的Rashba旋转轨道相互作用。 BEP的结合能随栅极电压在两个粒子能隙的整个宽度上的宽范围内变化。尽管自旋轨道相互作用破坏了自旋量化,但BEP具有磁矩,这主要是由电子的轨道运动创建的,并由栅极电压调节。

We show that the bound electron pairs (BEPs) emerge in two-dimensional gated Rashba materials owing to the interplay of the pair spin-orbit interaction, produced by the Coulomb fields of interacting electrons, and the peculiarities of the band structure giving rise to a negative reduced mass of the interacting electrons. Our consideration is based on the four-band Bernevig-Hughes-Zhang model with the Rashba spin-orbit interaction created by the charges on the gate. The binding energy of the BEP varies with the gate voltage in a wide range across the entire width of the two-particle energy gap. Although the spin-orbit interaction destroys the spin quantization, the BEPs have a magnetic moment, which is created mainly by the orbital motion of the electrons and tuned by the gate voltage.

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