论文标题
通过基材诱导的电子掺杂，单层WSE $ _2 $中的激子调整
Exciton tuning in monolayer WSe$_2$ via substrate induced electron doping
论文作者
论文摘要
我们通过底物诱导的非脱位掺杂在WSE $ _2 $单层中报告了大型激子调整。我们观察到$ \ sim $ 62 mev的红移，$ a $ ixciton以及1-2个数量级的光致发光（PL）淬火量（当单层WSE $ _2 $）与高度定向的热电含量石墨（Hopg）接触，与HBN和Sio $ $ $ $ __2 $相比。作为从Hopg到WSE $ _2 $掺杂的证据，观察到Trion发射强度的急剧增加。使用系统的PL和开尔文探针显微镜（KPFM）对WSE $ _2 $/HOPG，WSE $ _2 $/HBN和WSE $ _2 $/Graphene进行了调查，我们得出结论，这种独特的激发行为是由电子掺杂从substrate引起的。我们的结果提出了一种简单但有效的方法，用于单层WSE $ _2 $中的激子调整，该方法在基本的理解和进一步的设备开发中起着核心作用。
We report on large exciton tuning in WSe$_2$ monolayers via substrate induced non-degenerate doping. We observe a redshift of $\sim$62 meV for the $A$ exciton together with a 1-2 orders of magnitude photoluminescence (PL) quenching when the monolayer WSe$_2$ is brought in contact with highly oriented pyrolytic graphite (HOPG) compared to the dielectric substrates such as hBN and SiO$_2$. As the evidence of doping from HOPG to WSe$_2$, a drastic increase of the trion emission intensity was observed. Using a systematic PL and Kelvin probe force microscopy (KPFM) investigation on WSe$_2$/HOPG, WSe$_2$/hBN, and WSe$_2$/graphene, we conclude that this unique excitonic behavior is induced by electron doping from the substrate. Our results propose a simple yet efficient way for exciton tuning in monolayer WSe$_2$, which plays a central role in the fundamental understanding and further device development.
