论文标题
通过栅极驱动的有机离子插入诱导的钼二硫化物中的异常金属相
Anomalous metallic phase in molybdenum disulphide induced via gate-driven organic ion intercalation
论文作者
论文摘要
过渡金属二分裂基因元素表现出以超导性和电荷密度波的相互作用为主的丰富相图,这通常会导致电运性能异常。在这里,我们采用离子门控技术实现了二硫化钼(MOS $ _ {2} $)的散装单晶中可调的,非挥发的有机离子插入。我们证明,这种栅极驱动的有机离子插入量会引起系统中强烈的电子掺杂,而不会改变原始的$ 2H $晶体对称性,并触发了重新输入绝缘体到金属过渡的出现。我们表明,栅极诱导的金属状态在电阻率的温度依赖性中表现出明显的异常,自然解释是电荷密度波相的发育的特征,该阶段的发育是在碱性交换的MOS $ _ {2} $中以前观察到的。观察到异常的相对较高的温度($ \ sim $$ 150 $ k),加上没有任何掺杂引起的超导性的任何迹象,降低到$ \ sim $ 3 $ k,这表明这两个阶段可能相互竞争,以确定$ _2 $ $ _2 $的电子地面状态。
Transition metal dichalcogenides exhibit rich phase diagrams dominated by the interplay of superconductivity and charge density waves, which often result in anomalies in the electric transport properties. Here, we employ the ionic gating technique to realize a tunable, non-volatile organic ion intercalation in bulk single crystals of molybdenum disulphide (MoS$_{2}$). We demonstrate that this gate-driven organic ion intercalation induces a strong electron doping in the system without changing the pristine $2H$ crystal symmetry and triggers the emergence of a re-entrant insulator-to-metal transition. We show that the gate-induced metallic state exhibits clear anomalies in the temperature dependence of the resistivity with a natural explanation as signatures of the development of a charge-density wave phase which was previously observed in alkali-intercalated MoS$_{2}$. The relatively large temperature at which the anomalies are observed ($\sim$$150$ K), combined with the absence of any sign of doping-induced superconductivity down to $\sim$$3$ K, suggests that the two phases might be competing with each other to determine the electronic ground state of electron-doped MoS$_2$.