论文标题
石墨烯在单晶钻石上使用镍作为催化剂的快速直接生长
Rapid direct growth of graphene on single-crystalline diamond using nickel as catalyst
论文作者
论文摘要
尽管理论研究表明，石墨烯和钻石的成功组合将具有有趣的特性，但仅发表了有限数量的与该主题有关的报告。在这里，我们提出了一个快速的热过程（RTP），该过程涉及Ni作为金属催化剂，以在800 $^{\ Circ} $ C的温度下直接在钻石上直接生长1分钟。该过程的结合较低，并且持续时间较短的持续时间比以前报道的持续时间较短。具有不同厚度的薄Ni膜沉积在（100）单晶钻石上。 RTP之后，发现单层石墨烯的覆盖范围约为20％，在50 nm厚的Ni膜上使用拉曼光谱法在2D-和G峰之间的强度比显示了20％。另外，进行了X射线光电子光谱和原子力显微镜分析以进行其他研究。为了进行电气表征，在80至360 K的温度下进行了霍尔效应测量。
Although theoretical investigations indicate that the successful combination of graphene and diamond would give interesting properties, only a limited number of reports dealing with the subject have been published. Here, we present a rapid thermal process (RTP) which involves Ni as metal catalyst for a direct growth of graphene on diamond at a temperature of 800 $^{\circ}$C for 1 min. This process operates with a combination of a lower temperature and for a shorter duration than what has previously been reported. Thin Ni films with different thicknesses were deposited on top of (100) single crystalline diamond. After RTP, the coverage of monolayer graphene was found to be around 20% shown by the intensity ratio between the 2D- and G peak using Raman spectroscopy on 50-nm thick Ni films. In addition, x-ray photoelectron spectroscopy and atomic force microscopy analysis were conducted for additional investigation. For electrical characterization, Hall-effect measurements were performed at temperatures between 80 and 360 K.
