论文标题
Cl-和BR终止的SI（100）表面上的悬挂键
Dangling bonds on the Cl- and Br-terminated Si(100) surfaces
论文作者
论文摘要
硅表面上的卤素单层引起了对具有个别杂质的电子装置制造中应用的积极关注。为了创建用于杂质掺入的卤素面膜，希望能够从表面上去除单个卤素原子。我们报告了扫描隧道显微镜（STM）中Si（100）-2x1-Cl和-br表面的单个卤素原子的解吸。使用STM和密度功能理论研究了在卤素解吸后在Si表面形成的硅悬挂键（DBS）。三个指控状态：确定正，中性和阴性。我们的结果表明，可以操纵DBS的电荷状态，这将允许局部调整Cl-和BR端端的Si（100）表面的反应性。
Halogen monolayer on a silicon surface is attracting active attention for applications in electronic device fabrication with individual impurities. To create a halogen mask for the impurities incorporation, it is desirable to be able to remove a single halogen atom from the surface. We report the desorption of individual halogen atoms from the Si(100)-2x1-Cl and -Br surfaces in a scanning tunneling microscope (STM). Silicon dangling bonds (DBs) formed on the Si surface after halogen desorption were investigated using STM and the density functional theory. Three charge states: positive, neutral, and negative were identified. Our results show that the charge states of DBs can be manipulated, which will allow to locally tune the reactivity of the Cl- and Br-terminated Si(100) surfaces.
