论文标题
HL-LHC的辐射硬N-MCZ和N-FZ Si微带检测器的TCAD模拟和设计优化
TCAD Simulation and Design Optimization of Radiation Hard n-MCz and n-Fz Si Microstrip Detector for the HL-LHC
论文作者
论文摘要
HL-LHC的新CMS跟踪器检测器中使用了辐射硬Si检测器。已经观察到，N-MCZ和N-FZ Si作为Si微型带检测器可以使用。该材料的检测器设计应进行模拟和优化，以获得高CCE。为了了解N-MCZ/N-FZSI探测器的电荷收集行为，需要模拟和比较混合辐照的N-MCZ SI和中子辐照的N-FZSI微型带有金属悬垂物和多个防护环的辐射损伤效应。在本文中，我们对HL-LHC实验的辐射硬N-MCZ SI/N-FZ SI探测器设计进行了分析和优化，以获得高CCE。
A radiation hard Si detector is used in the new CMS tracker detector at HL-LHC. It has been observed that n-MCz and n-Fz Si as a material can be used for the Si micro strip detector. The detector design for this material should be simulated and optimized to get high CCE. In order to understand the charge collection behavior of the n-MCz/n-FzSi detector, it is required to simulate and compare the radiation damage effects in the mixed irradiated n-MCz Si and neutron irradiated n-FzSi micro strip detector equipped with metal overhang and multiple guard rings. In this paper, we have done analysis and optimization of the radiation hard n-MCz Si/n-Fz Si strip detector design for the HL-LHC experiment in order to get high CCE.
