论文标题
单层MOS2和WS2的启动活动性：与实验的比较并对设备特性的影响
Ab initio mobility of mono-layer MoS2 and WS2: comparison to experiments and impact on the device characteristics
论文作者
论文摘要
我们通过非平衡绿色功能（NEGF）组合线性化的玻尔兹曼传输方程（LBTE）和量子传输，以模拟单层MOS2和WS2超级晶体管以及从实验中提取的载流量。除了杂质浓度外，还考虑了所有必要的参数，这些杂质，带电的杂质和表面光学声子散射均考虑到所有必要的参数。 LBTE方法用于扩展NEGF的散射自我能力，其中仅包括局部相互作用。这样可以确保NEGF准确复制测量的迁移率。然后，我们进行设备模拟，并证明所考虑的晶体管远非其性能限制（MOS2的50％到WS2的60％）。需要更高质量的材料和基材工程来改善情况。
We combine the linearized Boltzmann Transport Equation (LBTE) and quantum transport by means of the Non-equilibrium Green's Functions (NEGF) to simulate single-layer MoS2 and WS2 ultra-scaled transistors with carrier mobilities extracted from experiments. Electron-phonon, charged impurity, and surface optical phonon scattering are taken into account with all necessary parameters derived from ab initio calculations or measurements, except for the impurity concentration. The LBTE method is used to scale the scattering self-energies of NEGF, which only include local interactions. This ensures an accurate reproduction of the measured mobilities by NEGF. We then perform device simulations and demonstrate that the considered transistors operate far from their performance limit (from 50% for MoS2 to 60% for WS2). Higher quality materials and substrate engineering will be needed to improve the situation.
