论文标题
CAMNO中的应变诱导的磁过渡$ _3 $超薄膜
Strain induced magnetic transition in CaMnO$_3$ ultra thin films
论文作者
论文摘要
经过实验研究并在理论上分析了高度拉伸应变和低维度对CAMNO $ _3 $超薄膜的磁性和电子性能的影响，在Srtio $ _3 $底物上生长。通过从头算的计算，我们发现，均由底物产生的高应变和自由表面的存在有助于稳定平面铁磁磁耦合，从而在超级薄膜中产生非零的净磁矩。再加上这种变化的磁性顺序，我们发现了由量子限制和拉伸外延菌株触发的绝缘剂 - 金属过渡。因此，在3NM超薄膜中，我们的磁性测量显示出铁磁磁滞回路，由于其G型抗抗铁磁性结构，在大体化合物中不存在。
The effect of high tensile strain and low dimensionality on the magnetic and electronic properties of CaMnO$_3$ ultrathin films, epitaxially grown on SrTiO$_3$ substrates, are experimentally studied and theoretically analyzed. By means of ab initio calculations, we find that, both, the high strain produced by the substrate and the presence of the free surface contribute to the stabilization of an in-plane ferromagnetic coupling, giving rise to a non-zero net magnetic moment in the ultrathin films. Coupled with this change in the magnetic order we find an insulator-metal transition triggered by the quantum confinement and the tensile epitaxial strain. Accordingly, our magnetic measurements in 3nm ultrathin films show a ferromagnetic hysteresis loop, absent in the bulk compound due to its G-type antiferromagnetic structure.
