论文标题
100 MK的180 nm CMOS技术的低温表征
Cryogenic Characterization of 180 nm CMOS Technology at 100 mK
论文作者
论文摘要
在低温条件下运行的常规CMO技术对其在低噪声电子中的用途引起了人们的兴趣。我们在100 mk的温度下提出了180 nm CMOS技术的第一个特征之一，提取I/V特征，阈值电压和跨导值，并观察其温度依赖性。我们发现，尽管我们观察到某些设备中的磁滞效应，但CMOS设备仍可以完全运行到这些温度。本文中描述的测量值可用于告知旨在在这种深度低温制度中操作的CMOS设备的未来设计。
Conventional CMOS technology operated at cryogenic conditions has recently attracted interest for its uses in low-noise electronics. We present one of the first characterizations of 180 nm CMOS technology at a temperature of 100 mK, extracting I/V characteristics, threshold voltages, and transconductance values, as well as observing their temperature dependence. We find that CMOS devices remain fully operational down to these temperatures, although we observe hysteresis effects in some devices. The measurements described in this paper can be used to inform the future design of CMOS devices intended to be operated in this deep cryogenic regime.
