论文标题
与等质梯形梁膜的微压传感器的仿真，制造技术和特征研究
The Simulation, Fabrication Technology and Characteristic Research of Micro-Pressure Sensor with Isosceles Trapezoidal Beam-Membrane
论文作者
论文摘要
A micro-pressure sensor with an isosceles trapezoidal beam-membrane (ITBM) is proposed in this paper, consisting of a square silicon membrane, four isosceles trapezoidal beams and four piezoresistors.To investigate how the elastic silicon membrane affects pressure sensitive characteristics, a simulation models based on ANSYS 15.0 software were used to analyze the effect of structural dimension on characteristics of pressure 传感器。据此，在具有<100>方向的硅晶片上，通过微压传感器的芯片通过微型机电系统（MEMS）技术制造。实验结果表明，所提出的传感器可实现9.64 mV/kPa的更好敏感性，并具有0.09％F.S的极好的线性线性。在室温下的0〜3.0 kPa范围内，电源电压为5.0 V，超级温度系数的灵敏度系数（TCS）约为-684 ppm/k，从235.15 K到360.15 k，低压测量值低于3.0 kpa。
A micro-pressure sensor with an isosceles trapezoidal beam-membrane (ITBM) is proposed in this paper, consisting of a square silicon membrane, four isosceles trapezoidal beams and four piezoresistors.To investigate how the elastic silicon membrane affects pressure sensitive characteristics, a simulation models based on ANSYS 15.0 software were used to analyze the effect of structural dimension on characteristics of pressure sensor. According to that, the chips of micro-pressure sensors were fabricated by micro-electro-mechanical system (MEMS) technology on a silicon wafer with <100> orientation.The experimental results show that the proposed sensor achieves a better sensitivity of 9.64 mV/kPa and an excellent linearity of 0.09%F.S. in the range of 0~3.0 kPa at room temperature and a supply voltage of 5.0 V,with a super temperature coefficient of sensitivity(TCS) about - 684 ppm/K from 235.15 K to 360.15 K and low pressure measurement less than 3.0 kPa.
