论文标题
基于固有的冷接触效应
A steep-slope MoS2-nanoribbon MOSFET based on an intrinsic cold-contact effect
论文作者
论文摘要
我们提出了一个陡峭的MOS2-Nanoribbon场现场效应晶体管，该晶体管利用窄能传导带来本质上滤除电子能量分布的热尾部。我们通过原子自一致的量子模拟来研究设备的操作原理以及对设计参数的性能依赖性。我们的结果表明，该设备可以提供高离子/IOFF比，但与电子应用兼容，尽管在0.1 V左右的超低电压下偏置。
We propose a steep-slope MoS2-nanoribbon field-effect transistor that exploits a narrow-energy conduction band to intrinsically filter out the thermionic tail of the electron energy distribution. We study the device operation principle and the performance dependence on the design parameters through atomistic self-consistent quantum simulations. Our results indicate that the device can provide high ION/IOFF ratios, compatible with electronic applications, albeit biased at ultralow voltages of around 0.1 V.
