论文标题
2DFET的大信号模型：终端电荷的紧凑建模和内在电容
Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances
论文作者
论文摘要
我们提出了一个基于物理的电路兼容模型，用于基于双门的二维半导体磁场晶体管，该模型为排水电流，终端电荷和固有电容提供明确的表达式。排水电流模型基于载体运输的漂移扩散机制，并考虑了费米 - 迪拉克统计量以及适当的现场效应方法。终端电荷和固有电容模型是通过Ward-Dutton线性电荷分区方案计算的，该方案保证了电荷保存。它已在Verilog-A中实现，以使其与标准电路模拟器兼容。为了基准测试提出的建模框架，我们还提出了实验性DC和有目的的单层MOS2 FET的高频测量值，显示了模型和实验之间的良好一致性，从而证明了组合方法的能力以预测2DFET的性能。
We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain current, terminal charges and intrinsic capacitances. The drain current model is based on the drift-diffusion mechanism for the carrier transport and considers Fermi-Dirac statistics coupled with an appropriate field-effect approach. The terminal charge and intrinsic capacitance models are calculated adopting a Ward-Dutton linear charge partition scheme that guarantees charge-conservation. It has been implemented in Verilog-A to make it compatible with standard circuit simulators. In order to benchmark the proposed modeling framework we also present experimental DC and high-frequency measurements of a purposely fabricated monolayer MoS2 FET showing excellent agreement between the model and the experiment and thus demonstrating the capabilities of the combined approach to predict the performance of 2DFETs.
