论文标题
磁性VDW异质结构中的自旋依赖性肖特基屏障和空缺诱导的自旋选择性欧姆接触
Spin-dependent Schottky barriers and vacancy-induced spin-selective Ohmic contacts in magnetic vdW heterostructures
论文作者
论文摘要
2D铁磁体（例如CRX3（X = CL，BR和I））一直吸引着广泛的关注，因为它们为基本物理和设备应用提供了新颖的平台。将CRX3与其他电极和底物集成在一起是其设备实现的重要步骤。因此，重要的是要了解CRX3和其他2D材料之间的界面特性。作为一个说明性的例子，我们研究了FirstPrinciples的CRX3和石墨烯（CRX3/GR）之间的异质结构。我们发现独特的Schottky触点类型在CRX3/GR中具有强烈自旋依赖性屏障。这可以通过CRX3半导体带和层间电荷转移的交换分裂之间的协同效应来理解。 Schottky屏障的脊柱对称可能会导致不同的旋转和向下电子的隧道速率，然后导致自旋偏振电流，即自旋滤波器（SF）效应。此外，通过将X空位引入CRX3/GR，这是沿旋转方向的欧姆接触形式。它可以增强旋转电子的传输，并提高SF效应。我们的系统研究揭示了CRX3/GR的独特界面特性，并为基于磁性VDW异质结构的自旋形成设备的理解和设计提供了理论观点。
The 2D ferromagnets, such as CrX3 (X=Cl, Br and I), have been attracting extensive attentions since they provide novel platforms to fundamental physics and device applications. Integrating CrX3 with other electrodes and substrates is an essential step to their device realization. Therefore, it is important to understand the interfacial properties between CrX3 and other 2D materials. As an illustrative example, we have investigated the heterostructures between CrX3 and graphene (CrX3/Gr) from firstprinciples. We find unique Schottky contacts type with strongly spin-dependent barriers in CrX3/Gr. This can be understood by synergistic effects between the exchange splitting of semiconductor band of CrX3 and interlayer charge transfer. The spinasymmetry of Schottky barriers may result in different tunneling rates of spin-up and down electrons, and then lead to spin-polarized current, namely spin-filter (SF) effect. Moreover, by introducing X vacancy into CrX3/Gr, an Ohmic contact forms in spin-up direction. It may enhance the transport of spin-up electrons, and improve SF effect. Our systematic study reveals the unique interfacial properties of CrX3/Gr, and provides a theoretical view to the understanding and designing of spintronics device based on magnetic vdW heterostructures.
