论文标题
在30°扭曲的双层石墨烯准晶体中脱钩
Interlayer Decoupling in 30° Twisted Bilayer Graphene Quasicrystal
论文作者
论文摘要
堆叠顺序对两层扭曲的双层石墨烯(BLG)之间的耦合具有很大的影响,这又决定了其物理特性。在这里,我们报告了在原子尺度上在Cu(111)上表现出生长的单晶30°扭曲的BLG的层间偶联的研究。 BLG的堆叠顺序和形态受合理设计的两步生长过程的控制,即热力学控制的成核和动力学控制的生长。确定30°twist的双层石墨烯(30°-TBLG)的晶体结构确定为对称性。使用扫描隧道显微镜(STM)和光谱法(STS)研究了30°-TBLG的电子特性和层间耦合。具有原位静电掺杂状态的能量依赖性局部密度(DOS)表明,两个石墨烯层中的电子状态在DIRAC点附近分离。线性分散剂源自成分石墨烯单层,并以两倍的退化性发现。这项研究有助于扭曲定义的BLG的控制生长,并提供了该有趣系统中电子性质和层间耦合的见解。
Stacking order has strong influence on the coupling between the two layers of twisted bilayer graphene (BLG), which in turn determines its physical properties. Here, we report the investigation of the interlayer coupling of the epitaxially grown single-crystal 30° twisted BLG on Cu(111) at the atomic scale. The stacking order and morphology of BLG is controlled by a rationally designed two-step growth process, that is, the thermodynamically controlled nucleation and kinetically controlled growth. The crystal structure of the 30°-twisted bilayer graphene (30°-tBLG) is determined to have the quasicrystal like symmetry. The electronic properties and interlayer coupling of the 30°-tBLG is investigated using scanning tunneling microscopy (STM) and spectroscopy (STS). The energy-dependent local density of states (DOS) with in-situ electrostatic doping shows that the electronic states in two graphene layers are decoupled near the Dirac point. A linear dispersion originated from the constituent graphene monolayers is discovered with doubled degeneracy. This study contributes to controlled growth of twist-angle-defined BLG, and provides insights of the electronic properties and interlayer coupling in this intriguing system.