论文标题

偶像/锰矿界面处的磁性:强旋转轨道相互作用的影响

Magnetism at iridate/manganite interface: influence of strong spin-orbit interaction

论文作者

Ovsyannikov, G. A., Shaikhulov, T. A, Demidov, V. V., Stankevich, K. L., Khaydukov, Yu., Andreev, N. V.

论文摘要

通过X射线(XRD),DC电阻测量,铁电磁共振(FMR)和偏光性中子反射率(PNR)进行了外延锰矿/液体异质结构的DC传输和磁性的复杂研究。异质结构的外延生长是根据晶格转弯的立方体到立方体机制进行的。直流测量表明,由于液体的电荷泄漏使其被掺杂,而锰矿侧变成电子掺杂,因此在液/锰矿界面上存在传导通道。基于密度功能理论的第一原理计算[Sayantika bhowal和Sashi Satpathy AIP会议会议记录2005,020007(2018)]证实了这一点,该计算显示了从半填充的旋转旋转旋转的jeff = 1/2的iStace = 1/2偶然性e的空e空e的iff = 1/2的状态。中子散射数据表明,在靠近外部场的26度上,异质结构(主要是锰矿)的磁化载体转弯,温度降低至10K。出现在T <100K的其他铁磁状态表明,靠近界面的薄(10 nm)磁磁性SIO膜中的铁磁性出现。我们已经测量了由自旋泵送和异质结构中各向异性磁化引起的SIO膜引起的直流电压。

The complex investigation of dc transport and magnetic properties of the epitaxial manganite/iridate heterostructure was carried out by mean of X-ray (XRD), dc resistance measurements, ferromagnetic resonance (FMR) and polarized neutron reflectivity (PNR). Epitaxial growth of the heterostructure proceeded according to the cube-to-cube mechanism with the small lattice turn. The dc measurement indicates the presence of a conduction channel at the iridate/manganite interface due to the charge leakage from iridate that makes it hole doped, while the manganite side becomes electron doped. This is confirmed by the first principles calculations based on density functional theory [Sayantika Bhowal, and Sashi Satpathy AIP Conference Proceedings 2005, 020007 (2018)] that show the charge transfer at the interface from the half-filled spin-orbit entangled Jeff = 1/2 state of the iridate to the empty e states of manganite. The neutron scattering data show the turn of magnetization vector of the heterostructure (mainly manganite) on 26 degree closer to the external field with reducing temperature down to 10K. Additional ferromagnetic state appearing at T<100K indicate on emergence of ferromagnetism in the thin (10 nm) paramagnetic SIO film close to the interface. We have measured the dc voltage aroused on the SIO film caused by spin pumping and the anisotropic magnetoresistance in the heterostructure.

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