论文标题
Spin-3/2硅空位中心的实验表征6H-SIC
Experimental characterization of spin-3/2 silicon vacancy centers in 6H-SiC
论文作者
论文摘要
碳化硅（SIC）有许多有趣的缺陷，可以作为一系列高级量子技术的Qubits。其中一些具有非常有趣的属性，使它们有可能有用，例如作为固定和飞行器之间的接口。在这里，我们介绍了6H-SIC多型硅空缺中旋转相关特性的详细概述。这包括依赖温度的光致发光，光学检测到的磁共振以及自旋转的纵向和横向成分的弛豫时间，在自由进动过程中以及在不同的重新聚焦方案的影响下。
Silicon carbide (SiC) hosts many interesting defects that can potentially serve as qubits for a range of advanced quantum technologies. Some of them have very interesting properties, making them potentially useful, e.g. as interfaces between stationary and flying qubits. Here we present a detailed overview of the relevant properties of the spins in silicon vacancies of the 6H-SiC polytype. This includes the temperature-dependent photoluminescence, optically detected magnetic resonance, and the relaxation times of the longitudinal and transverse components of the spins, during free precession as well as under the influence of different refocusing schemes.
