论文标题
一维范德华泰瑟纳米线的拉曼响应和运输特性
Raman Response and Transport Properties of One-Dimensional van der Waals Tellurium Nanowires
论文作者
论文摘要
柜员可以形成螺旋原子链的纳米线。鉴于它们独特的一维范德华结构，这些纳米线的物理和电子特性与批量校的表现明显不同。在这里，我们表明，可以使用碳纳米管和硝酸硼纳米管封装来分离几链和单链范德华纳米线。通过方法，可以通过纳米管的内径控制原子链的数量。结构的拉曼反应表明，单原子舍鲁链链和碳纳米管之间的相互作用很弱，并且随着链的数量的增加，链间相互作用变得更强。与SiO2上的裸露纳米线相比，封装在硝酸硼纳米管中的纳米线表现出巨大增强的电流能力，电流密度为1.5*10^8 A cm-2，超过了大多数半导体纳米线。我们还使用固定在氮化硼纳米管中的纳米线来创建直径仅为2 nm的场效应晶体管。
Tellurium can form nanowires of helical atomic chains. Given their unique one-dimensional van der Waals structure, these nanowires are expected to show remarkably different physical and electronic properties than bulk tellurium. Here we show that few-chain and single-chain van der Waals tellurium nanowires can be isolated using carbon nanotube and boron nitride nanotube encapsulation. With the approach, the number of atomic chains can be controlled by the inner diameter of the nanotube. The Raman response of the structures suggests that the interaction between a single-atomic tellurium chain and a carbon nanotube is weak, and that the inter-chain interaction becomes stronger as the number of chains increases. Compared with bare tellurium nanowires on SiO2, nanowires encapsulated in boron nitride nanotubes exhibit a dramatically enhanced current-carrying capacity, with a current density of 1.5*10^8 A cm-2, which exceeds that of most semiconducting nanowires. We also use our tellurium nanowires encapsulated in boron nitride nanotubes to create field-effect transistors that have a diameter of only 2 nm.
