论文标题
用抗氯的STM光刻在Si（100）-2x1上局部去除硅层
Local removal of silicon layers on Si(100)-2x1 with chlorine-resist STM lithography
论文作者
论文摘要
我们报告了在77 K处的氯化Si（100）-2x1表面上去除硅层的基于STM的光刻的实现。与其他STM光刻研究相比，我们能够在局部氯和硅原子上除去局部。大多数蚀刻凹坑的侧向大小为10-20 a，深度为1-5 A.在其中获得具有原子分辨率的STM图像的凹坑中，底部主要被氯覆盖。一些坑包含氯空位。讨论了SI诱导的SI诱导去除硅和氯原子的机理（100）-2x1-Cl，并将其与SI诱导的SI诱导的氢解吸的病例进行了比较（100）-2x1-H。结果开辟了具有STM光刻的三维本地蚀刻的新可能性。
We report the realization of STM-based lithography with silicon layers removal on the chlorinated Si(100)-2x1 surface at 77 K. In contrast to other STM lithography studies, we were able to remove locally both chlorine and silicon atoms. Most of the etched pits have a lateral size of 10-20 A and a depth of 1-5 A. In the pits in which the STM image with atomic resolution is obtained, the bottom is mainly covered with chlorine. Some pits contain chlorine vacancies. Mechanisms of STM-induced removal of silicon and chlorine atoms on Si(100)-2x1-Cl are discussed and compared with the well-studied case of STM-induced hydrogen desorption on Si(100)-2x1-H. The results open up new possibilities of the three-dimensional local etching with STM lithography.
