论文标题
NIO中的镍空位受体：超越热力学平衡的掺杂
The nickel vacancy acceptor in NiO: doping beyond thermodynamic equilibrium
论文作者
论文摘要
这项工作报道了温度引起的宽间隙P型半导体镍氧化物（NIO）中突出的内在点缺陷VNI（镍空位）的偏移和浓度衰减。 VNI可以通过在膜生长过程中提供高氧部分压力来轻松地引入Nio薄膜，从而呈现非缩写的半导体结构。但是，在生长后暴露于较低的氧气供应，例如在标准气氛中，通常会导致膜电导率逐渐降低，因为空置浓度平衡。在这项研究中，我们通过在室温生长的NiO膜上对电导率进行温度依赖性测量来观察此过程。在排除氧气下的420k温度下，掺杂水平降低了8倍，而相关的室温直流电导率下降了六个数量级。同时，可以通过出现电极极化特性来间接观察到移动VNI物种的偏移。
This work reports on temperature-induced out-diffusion and concentration decay of the prominent intrinsic point defect VNi (nickel vacancy) in the wide-gap p-type semiconductor nickel oxide (NiO). VNi can easily be introduced into NiO thin films by offering high oxygen partial pressures during film growth, rendering nonstoichiometric semiconducting structures. However, exposure to lower oxygen supply after growth, e.g. in a standard atmosphere, usually leads to a gradual decrease of film conductivity, because the vacancy concentration equilibrates. In this study, we observe this process in situ by performing temperature-dependent measurements of the electrical conductivity on a room temperature-grown NiO film. At a temperature of 420K under exclusion of oxygen, the doping level decreases by a factor of 8 while the associated room temperature dc conductivity drops by six orders of magnitude. At the same time, out-diffusion of the mobile VNi species can be indirectly observed through the occurrence of electrode polarization characteristics.
