论文标题
抗铁磁薄膜中自旋大厅磁磁性的结构敏感性
Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films
论文作者
论文摘要
读取抗铁磁（AFM）薄膜的磁态是AFM Spintronic设备的关键。我们研究了铂和绝缘AFM赤铁矿（α-FE2O3）的自旋霍尔磁磁力（SMR）背后的潜在物理学，并找到高达0.1％的SMR效率，可与基于铁磁基的结构相当。为了了解观察到的复杂SMR场依赖性，我们通过电测量和直接磁成像分析了在薄膜生长过程中出现的磁轴未对准的影响，并发现很小的偏差会导致SMR响应中的显着特征。这突出了在解释AFM旋转纹理上的SMR测量时必须采取的护理。
Reading the magnetic state of antiferromagnetic (AFM) thin films is key for AFM spintronic devices. We investigate the underlying physics behind the spin Hall magnetoresistance (SMR) of bilayers of platinum and insulating AFM hematite (α-Fe2O3) and find an SMR efficiency of up to 0.1%, comparable to ferromagnetic based structures. To understand the observed complex SMR field dependence, we analyse the effect of misalignments of the magnetic axis that arise during growth of thin films, by electrical measurements and direct magnetic imaging, and find that a small deviation can result in significant signatures in the SMR response. This highlights the care that must be taken when interpreting SMR measurements on AFM spin textures.
