论文标题

空缺缺陷在固体高阶谐波产生中的影响

Influence of vacancy defects in solid high-order harmonic generation

论文作者

Pattanayak, Adhip, S., Mrudul M., Dixit, Gopal

论文摘要

目前的工作讨论了空位缺陷在固体高阶谐波生成中的影响。高阶谐波频谱的总能量截止随着空缺缺陷浓度的函数增加,并且总光谱逐渐变成单个倾斜光谱,而无需在初级和二级高原之间突然过渡。与原始固体中的谐波相比,与空位缺陷的固体相比,频段间隙谐波的光谱强度显着增强。谐波光谱的变化是根据其有效的带结构来理解的。空缺缺陷的存在打破了局部单位细胞的翻译对称性。因此,出现了新的缺陷状态,这为电子动力学打开了其他路径。 Gabor轮廓中未解决的电子轨迹确认了其他路径的干扰。此外,与与与缺陷相对应的高阶谐波频谱相比,单个倾斜的高阶谐波光谱具有空置缺陷的独特特征,例如吸收不足或过量的固体。

The present work discusses the impact of vacancy defects in solid high-order harmonic generation. The total energy cutoff of the high-order harmonic spectrum increases as a function of concentration of vacancy defects, and the total spectrum gradually turns into a single slanted spectrum without having an abrupt transition between primary and secondary plateaus. The spectral intensity of the below-band-gap harmonics in a solid with vacancy defects is enhanced significantly in comparison to the harmonics in a pristine solid. The changes in the harmonic spectra are understood in terms of their effective band structures. The presence of vacancy defects breaks the translational symmetry of the unit cell locally. As a consequence of this, new defect states appear, which open additional paths for the electron dynamics. The ill-resolved electron trajectories in the Gabor profile confirm the interference of additional paths. Moreover, the single slanted high-order harmonic spectrum carries a unique signature of vacancy defects in comparison to the high-order harmonic spectrum corresponding to solids with defects such as underdoping or overdoping.

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